Ab initio study of the diffusion mechanisms of gallium in a silicon matrix
| Year of publication: |
2008
|
|---|---|
| Authors: | Levasseur-Smith, K. ; Mousseau, N. |
| Published in: |
The European Physical Journal B - Condensed Matter and Complex Systems. - Springer. - Vol. 64.2008, 2, p. 165-172
|
| Publisher: |
Springer |
| Subject: | 61.72.Cc Kinetics of defect formation and annealing | 61.72.uf Ge and Si | 61.72.uj III–V and II–VI semiconductors | 61.72.S-Impurities in crystals |
| Extent: | text/html |
|---|---|
| Type of publication: | Article |
| Source: |
Persistent link: https://www.econbiz.de/10009280510