MICROCIRCUITS -- DESIGN, MANUFACTURE, TEST, USE: Simulation of hot-carrier induced MOS circuit degradation for VLSI reliability analysis
| Year of publication: |
1994
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|---|---|
| Authors: | Leblebici, Y. ; Kang, S. |
| Published in: |
IEEE transactions on reliability : R ; IEEE T R. - New York, NY, ISSN 0018-9529, ZDB-ID 2416372. - Vol. 43.1994, 2, p. 197-206
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