Multiple-frequency current oscillations in GaAs-AlGaAs quantum wells containing a thin semi-insulating layer
We have investigated non-equilibrium electron transport properties of a quantum well with an inserted thin semi-insulating potential barrier layer in nonlinear bias using a time-dependent simulation technique. We find that the charge redistribution with time in the whole structure has an important effect on the final current-voltage (I-V) curves. The results show that there are two evident current hysteresis phenomena in the negative differential conductance regions and the inserted semi-insulating potential barrier layer induces the formation of multiple emitter quantum wells, which leads to high-frequency terahertz current oscillations with multiple-frequency relations around the valley of current. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005
Year of publication: |
2005
|
---|---|
Authors: | Dai, Z. H. ; Ni, J. |
Published in: |
The European Physical Journal B - Condensed Matter and Complex Systems. - Springer. - Vol. 47.2005, 3, p. 443-447
|
Publisher: |
Springer |
Saved in:
Saved in favorites
Similar items by person
-
Dai, Z. H., (2007)
-
Market segmentation and firm survival
Lyu, Xinjun, (2021)
-
Automatic digitization of free-form curve by coordinate measuring machines
Chen, Y.D., (1994)
- More ...