Numerical approach of a free boundary in the junction field effect transistor – MESFET

This paper presents the numerical approach of the free boundary by using shape optimization method. The numerical simulation field effect transistor MESFET is possible with the Laplace–Poisson model, which introduces two regions, respectively, known by “charge neutrality region” and “depletion region”, separated by some free boundary.

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Year of publication:	1998
Authors:	Abouchabaka, J ; Aboulaı̈ch, R ; Souissi, A
Published in:	Mathematics and Computers in Simulation (MATCOM). - Elsevier, ISSN 0378-4754. - Vol. 47.1998, 6, p. 531-539
Publisher:	Elsevier
Subject:	Semiconductor problem \| Free-boundary problem \| Shape optimization method

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Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10011051121