Numerical study of quantum transport in carbon nanotube transistors

A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green’s function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron–phonon coupling strength and phonon energy, on the device performance are analyzed.

MoreLess

Year of publication:	2008
Authors:	Pourfath, M. ; Kosina, H. ; Selberherr, S.
Published in:	Mathematics and Computers in Simulation (MATCOM). - Elsevier, ISSN 0378-4754. - Vol. 79.2008, 4, p. 1051-1059
Publisher:	Elsevier
Subject:	Nanotube transistors \| Electron–phonon interaction \| Quantum transport

Online Resource

Check full text access |

More access options

Check Google Scholar

In libraries world-wide (WorldCat)

In German libraries (KVK)

subito order

I need help

More details

Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10010748843