OPTICAL AND ELECTRICAL PROPERTIES OF La2O3 FILMS PREPARED BY ION BEAM ASSISTANT ELECTRON BEAM EVAPORATION
La2O3 films were deposited on Si(100) substrates by ion beam assistant electron beam evaporation and were annealed at 450–900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10-7 to 10-4 A/cm2 with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ~18.
Year of publication: |
2008
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Authors: | YANG, CHEN ; FAN, HUIQING ; QIU, SHAOJUN ; XI, YINGXUE ; FU, YUNFEI |
Published in: |
Surface Review and Letters (SRL). - World Scientific Publishing Co. Pte. Ltd., ISSN 1793-6667. - Vol. 15.2008, 03, p. 271-275
|
Publisher: |
World Scientific Publishing Co. Pte. Ltd. |
Subject: | La2O3 films | electron beam evaporation | film structure | optical and electrical properties |
Saved in:
Online Resource
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