Optimization of impurity profile for p-n-junction in heterostructures

We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

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Year of publication:	2005
Authors:	Pankratov, E. L. ; Spagnolo, B.
Published in:	The European Physical Journal B - Condensed Matter and Complex Systems. - Springer. - Vol. 46.2005, 1, p. 15-19
Publisher:	Springer

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Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10009282156