STUDY OF THE STRUCTURE AND PROPERTIES OF (Bi1-xCex)2Ti2O7 THIN FILMS PREPARED BY CHEMICAL SOLUTION DECOMPOSITION METHOD

(Bi1-xCex)2Ti2O7 thin films were grown on p-Si 〈100〉 substrates by chemical solution decomposition method. The relationship between the doping levels of cerium ions and the phase transition temperatures was studied. The doping of cerium ions could improve the phase stability of Bi2Ti2O7, and the reason was comprehensively explained by the charge compensating theory. The doping of Ce ions enhances the crystallization temperature, which make the crystallization difficult, so the amount of cerium ions should be kept appropriate. The dielectric properties of (Bi1-xCex)2Ti2O7 thin films with different X values at different temperatures and different doping levels were listed, and the latent variation tendency was found. When the annealing temperature was 650–700°C and X = 0.12 or 0.16, the thin films showed better dielectric properties than the others.