Superradiant dissipative tunneling in a double p–i–n semiconductor heterostructure with thermal injection of electrons

We propose a semiconductor device with two p–i–n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the second gate. The injection current is amplified by this reaction loop. In this way, the heat flow between the two junctions is partially transformed in superradiant power.