We report a photodetector consisting of SnO 2 nanofibers (NFs) on an n-type Si wafer as the SnO 2 NFs/n-Si architecture. The microstructure analysis was determined by utilizing the advanced X-ray diffraction approach (WPPM). The DRS spectrum and detailed photoluminescence (PL) measurements has been carried out to study of the optical properties. In addition, the current-voltage, frequency-dependent capacitance/conductance-voltage, and voltage-dependent capacitance-frequency measurements of the SnO 2 NFs/ n -Si device were analyzed, in the dark. From the dark I-V measurements, the rectification ratio, reverse current (at -2 V), ideality factor, and barrier height were determined as 19631 (at ± 2 V), ~2.5×10 -9 A (at - 2 V), 2.56, and 0.85 eV, respectively. Furthermore, the shunt resistance (Rsh) (at -2 V) and series resistance (Rs) (at +2 V) of the device were calculated as ~1.1 GΩ and ~2.8 kΩ, respectively from the dark I-V graph. For the photodetector characteristics of the SnO 2 NFs/n-Si device, light intensity-dependent I-V measurements ranged from 20 mW/cm 2 to 150 mW/cm 2 were carried out. Experimental Rsh and Rs were also determined as a function of light intensity. The device's ON/OFF ratio, the detectivity, and the responsivity reached as high as 9334, 1.38×10 11 Jones and 0.66 A/W for 150 A/mW, at -1.5 Volt
