The Effect of Dopant on Light Trapping in Random Silicon Nanowires Array

The Light management is a fundamental study to improve the solar cell and photoelectrical devices conversion efficiency. Here, the spectral responses of reflection and absorption characteristics of random silicon nanowire (Si NW) arrays of different lengths and doping type is investigated. The Si NW have been synthesized by metal induced etching method have dimensions of Sub-wavelength regime. These Si NW arrays show efficient light trapping and low reflectance than bare Si due to suppression of Fresnel reflection substantially over a wide spectral range. The comparative study of light trapping in Si NW, fabrication by using n-type and p-type silicon wafer are explored to add new dimension in the field of photovoltaic application. The field distribution of Si NWs was simulated using finite differential time domain method, results shows that reflectance could be modified due to light absorption driven by multiple scattering inside the structure reaching high values of apparent absorbance