The Synergetic Effects of the Defects on the Spin Splitting in Armchair Boron Phosphide Nanoribbons

The spin splitting in two-dimensional materials is a key factor for the development of spintronics. In here, based on the hexagon boron phosphide (BP) monolayer, the collaborating effects between impurities and vacancies on the spin splitting have been considered. By first-principle calculations, we studied electronic structure of two types of nanoribbons. One type of the ribbons contains two different nonmagnetic impurity atoms, such as O, C, N, Al and S, denoting the ribbon as X B(P) /Y B(P) , X and Y represent the two different impurity atoms and the subscript B(P) indicates the substituted boron (phosphorus) atom. Another type is that the ribbons contains a single vacancy and an impurity atom, denoted as V B(P) /X B(P) , V B(P) refers to a single boron (phosphorus) vacancy. Our calculational results manifest that the S atom can induce spin polarization of the Al atom in the ribbon Al P /S P . This originates from the half-filled defect states and the relative position between defect levels. Our study might be helpful to understand the magnetism of the boron phosphide nanoribbons with two or more impurities or defects