Two-dimensional Modelling and Characterization of Gate-to-drain Overlap Contribution on the Leakage Current of a MOSFET, used as a GCD
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|Authors:||Ciantar, E. ; Burgniard, S. ; Jérisian, R. ; Oualid, J.|
Quality and reliability engineering international. - Chichester [u.a.] : Wiley, ISSN 0748-8017, ZDB-ID 506412. - Vol. 9.1993, 4, p. 337-340
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