SELLAI, A.; MAMOR, M.; AL-HARTHI, S. - In: Surface Review and Letters (SRL) 14 (2007) 04, pp. 765-768
Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers...