Cu, Al, and Ti films of ~ 10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence...

Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, and Si-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse...

When it comes to strategy, how should we define victory? For centuries, Eastern and Western thinkers have grappled with this question, offering different answers. What can we learn from this difference? In The Art of Strategy, Moon provides a novel and systematic integration of the two dominant...