FENG, WANG LI; WEI, ZHANG WEI; QING, ZHOU YU; MING, ZHU - In: Surface Review and Letters (SRL) 14 (2007) 04, pp. 745-749
fabricated on the Si substrate by using semiconductor techniques. The studies on the capacitance properties were carried out … the typical p-type semiconductor. It was shown that the capacitance increases with the increasing of the temperature under … certain gate bias. The sudden increase of the capacitance at 160 K was observed and needeed to be studied further. Meanwhile …