In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at...

Thin film of tin oxide (SnO2) was prepared on p-type polished silicon wafer by ultrasonic spray pyrolysis technique using SnCl4 precursor solution to fabricate nanospherical n-SnO2/p-Si heterojunction photoelectric device. Deposition of film was achieved at 400°C substrate temperature. The...