Showing 1 - 10 of 10
Using the effective-mass approximation within a variational scheme, we have calculated the diamagnetic susceptibility and binding energy of a hydrogenic donor in a quantum well under different temperatures and hydrostatic pressure conditions. Our calculation have revealed the dependence of the...
Persistent link: https://www.econbiz.de/10011011140
We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga<Subscript> x </Subscript>In<Subscript>1-</Subscript> <Subscript> x </Subscript>N<Subscript> y </Subscript>As<Subscript>1-</Subscript> <Subscript> y </Subscript>N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization....</subscript></subscript></subscript></subscript></subscript></subscript>
Persistent link: https://www.econbiz.de/10009281902
Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor...
Persistent link: https://www.econbiz.de/10005080544
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Valence band structure with spin–orbit (SO) coupling of GaAs/Ga1-xAlxAs square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ($\vec {k}\cdot \vec {p}$ method). The validity...
Persistent link: https://www.econbiz.de/10008474844
The binding energy of the donor in three different shaped triple graded GaAs-(Ga, Al)As quantum wells which is obtained by changing the depth of the central-well potential (Vo) is calculated by using a variational approach. The results have been obtained in the presence of uniform magnetic and...
Persistent link: https://www.econbiz.de/10004971862
In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and asymmetric GaAs/Al0.33Ga0.67As double quantum wells. Electronic properties of...
Persistent link: https://www.econbiz.de/10004996449
The binding energy of a hydrogen-like impurity in an ellipsoidal parabolic quantum dot under the magnetic and electric fields have been discussed by using the effective mass approximation and the variational method. We have calculated the effects of the magnetic and electric fields on the...
Persistent link: https://www.econbiz.de/10005050656