An MTO theory for the calculation of deep levels in semiconductors due to a nonsubstitutional impurity cluster

In this paper an MTO method is presented to calculate deep levels in semiconductors due to a nonsubstitutional impurity cluster. Through the introduction of this cluster, not only can we allow for charge transfer, but also lattice relaxation is incorporated. In addition, the theory is applicable to the case of an interstitial imperfection.

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Year of publication:	1981
Authors:	Rotthier, R. ; Scheire, L. ; Phariseau, P.
Published in:	Physica A: Statistical Mechanics and its Applications. - Elsevier, ISSN 0378-4371. - Vol. 108.1981, 2, p. 622-630
Publisher:	Elsevier

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Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10010871574