An MTO theory for the calculation of deep levels in semiconductors due to a substitutional impurity cluster

In this paper an MTO method is presented to calculate deep levels in semiconductors due to a substitutional impurity cluster. The present approach combines several attractive features of both KKR and LCAO techniques. Furthermore the energy dependence is much more transparent than in the standard KKR theory.

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Year of publication:	1980
Authors:	Rotthier, R. ; Scheire, L. ; Phariseau, P.
Published in:	Physica A: Statistical Mechanics and its Applications. - Elsevier, ISSN 0378-4371. - Vol. 104.1980, 1, p. 233-242
Publisher:	Elsevier

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Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10010872616