The effects of the intense laser field on bound states in Ga<Subscript> x </Subscript>In<Subscript>1-</Subscript> <Subscript> x </Subscript>N<Subscript> y </Subscript>As<Subscript>1-</Subscript> <Subscript> y </Subscript>N/GaAs single quantum well

We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga<Subscript> x </Subscript>In<Subscript>1-</Subscript> <Subscript> x </Subscript>N<Subscript> y </Subscript>As<Subscript>1-</Subscript> <Subscript> y </Subscript>N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011